Corrigendum: "Influence of surface nitridation and an AlN buffer layer on the growth of GaN nanostructures on a flexible Ti metal foil using laser molecular beam epitaxy" [Jpn. J. Appl. Phys. 58, SC1032 (2019)]. (17th June 2019)

Record Type:: Journal Article
Title:: Corrigendum: "Influence of surface nitridation and an AlN buffer layer on the growth of GaN nanostructures on a flexible Ti metal foil using laser molecular beam epitaxy" [Jpn. J. Appl. Phys. 58, SC1032 (2019)]. (17th June 2019)
Main Title:: Corrigendum: "Influence of surface nitridation and an AlN buffer layer on the growth of GaN nanostructures on a flexible Ti metal foil using laser molecular beam epitaxy" [Jpn. J. Appl. Phys. 58, SC1032 (2019)]
Authors:: Ramesh, Chodipilli
Tyagi, Prashant
Gupta, Govind
Kumar, Muthusamy Senthil
Kushvaha, Sunil Singh
Abstract:
Is Part Of:: Japanese journal of applied physics. Volume 58:Number 7(2019)
Journal:: Japanese journal of applied physics
Issue:: Volume 58:Number 7(2019)
Issue Display:: Volume 58, Issue 7 (2019)
Year:: 2019
Volume:: 58
Issue:: 7
Issue Sort Value:: 2019-0058-0007-0000
Page Start:
Page End:
Publication Date:: 2019-06-17
Subjects:: Physics -- Periodicals
621.05
Journal URLs:: http://iopscience.iop.org/1347-4065/ ↗
http://ioppublishing.org/ ↗
DOI:: 10.7567/1347-4065/ab26a6 ↗
Languages:: English
ISSNs:: 0021-4922
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - BLDSS-3PM
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Ingest File:: 19360.xml