Cite
HARVARD Citation
Itocazu, V. et al. (2019). Comparison between nMOS and pMOS Ω-gate nanowire down to 10 nm width as a function of back gate bias. Semiconductor science and technology. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Itocazu, V. et al. (2019). Comparison between nMOS and pMOS Ω-gate nanowire down to 10 nm width as a function of back gate bias. Semiconductor science and technology. p. . [Online].