Growth and characterization of low composition Ge, x in epi-Si1−xGex (x  ⩽  10%) active layer for fabrication of hydrogenated bottom solar cell. (16th April 2018)

• Record Type: Journal Article
• Authors: Ajmal Khan, M; Sato, R; Sawano, K; Sichanugrist, P; Lukianov, A; Ishikawa, Y
• Is Part Of: Journal of physics. Volume 51:Number 18(2018)
• Publication Date: 2018-04-16
• Subjects: SiGe Alloy -- MBE growth -- PECVD -- bottom solar cell -- heterojunction (HET) -- photocurrent; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aab80d
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Semiconducting epi-Si1− x Ge x alloys have promising features as solar cell materials and may be equally important for some other semiconductor device applications. Variation of the germanium compositional, x in epi-Si1− x Ge x, makes it possible to control the bandgap between 1.12 eV and 0.68 eV for application in bottom solar cells. A low proportion of Ge in SiGe alloy can be used for photovoltaic application in a bottom cell to complete the four-terminal tandem structure with wide bandgap materials. In this research, we aimed to use a low proportion of Ge—about 10%—in strained or relaxed c-Si1− x Ge x /c-Si heterojunctions (HETs), with or without insertion of a Si buffer layer grown by molecular beam epitaxy, to investigate the influence of the relaxed or strained SiGe active layer on the performance of HET solar cells grown using the plasma enhanced chemical vapor deposition system. Thanks to the c-Si buffer layer at the hetero-interface, the efficiency of these SiGe based HET solar cells was improved from 2.3% to 3.5% (fully strained and with buffer layer). The Jsc was improved, from 8 mA cm −2 to 15.46 mA cm −2, which might be supported by strained c-Si buffer layer at the hetero-interface, by improving the crystalline quality.