Cite
HARVARD Citation
He, J. et al. (2019). Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact. Applied physics express. p. . [Online].
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He, J. et al. (2019). Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact. Applied physics express. p. . [Online].