Non-chemical fluorination of hexagonal boron nitride by high-energy ion irradiation. (8th January 2020)

• Record Type: Journal Article
• Authors: Entani, Shiro; Larionov, Konstantin V; Popov, Zakhar I; Takizawa, Masaru; Mizuguchi, Masaki; Watanabe, Hideo; Li, Songtian; Naramoto, Hiroshi; Sorokin, Pavel B; Sakai, Seiji
• Is Part Of: Nanotechnology. Volume 31:Number 12(2020)
• Publication Date: 2020-01-08
• Subjects: hexagonal boron nitride -- heteroatom doping -- high-energy ion irradiation -- near edge x-ray absorption fine structure -- ab initio calculation; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ab5bcc
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Two-dimensional materials such as hexagonal boron nitride ( h -BN) and graphene have attracted wide attention in nanoelectronics and spintronics. Since their electronic characteristics are strongly affected by the local atomic structure, the heteroatom doping could allow us to tailor the electronic and physical properties of two-dimensional materials. In this study, a non-chemical method of heteroatom doping into h -BN under high-energy ion irradiation was demonstrated for the LiF/ h -BN/Cu heterostructure. Spectroscopic analysis of chemical states on the relevant atoms revealed that 6% ± 2% fluorinated h -BN is obtained by the irradiation of 2.4 MeV Cu 2+ ions with the fluence up to 10 14 ions cm −2 . It was shown that the high-energy ion irradiation leads to a single-sided fluorination of h -BN by the formation of the fluorinated sp 3 -hybridized BN.