Effect of fabrication conditions on charge transport and photo-response of n-ITO/p-Cd1−xZnxTe heterojunctions. (19th June 2019)

• Record Type: Journal Article
• Authors: Orletskyi, I G; Ilashchuk, M I; Solovan, M M; Maryanchuk, P D; Maistruk, E V; Andrushchak, G O
• Is Part Of: Materials research express. Volume 6:Number 8(2019)
• Publication Date: 2019-06-19
• Subjects: ITO/Cd1−хZnхTe -- heterojunction -- interface states -- current transport; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/ab26f3
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: Conditions for the production of heterostructures n -ITO/ p -Cd1-х Znх Te with rectifying and photosensitive properties by the magnetron sputtering method of the thin films (ITO) on crystalline substrate p -Cd1−x Znx Te are studied. On the basis of analysis of the temperature dependence of I-V -characteristics and the frequency dependence of C-V characteristics, the dynamics of the change in heterostructure energy parameters are established, and the role of the energy states at the ITO/Cd1-х Znх Te heterojunction interface in the formation of the heterojunction potential barrier is determined. Also we investigated photoelectric properties of the ITO/Cd1х Znх Te heterostructure.