Electrical characterization of graphene source/drain electrodes in amorphous indium-gallium-zinc-oxide thin-film transistors subjected to plasma treatment in contact regions. (24th June 2019)

• Record Type: Journal Article
• Authors: Jeong, Jaewook; Kim, Joonwoo
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 7(2019)
• Publication Date: 2019-06-24
• Subjects: IGZO -- graphene -- oxide-based -- source/drain -- plasma treatment; Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab24fe
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this paper, the electrical characteristics of a-IGZO TFTs with graphene source/drain (S/D) electrodes subjected to argon plasma treatment are analyzed. Depending on the channel length ( L ), the a-IGZO TFTs showed parasitic resistance dominant ( L < 30 μ m) and channel conduction dominant regions ( L ≥ 30 μ m). Using the transmission line method, the intrinsic parameters were extracted. The intrinsic field-effect mobility was about 9.79 cm 2 V −1 s −1 and the width-normalized parasitic resistance value was about 460 Ω∙cm, which are comparable with those of a-IGZO TFTs having S/D plasma-treated regions with no contact metal. Temperature-dependent measurement indicates that the graphene electrodes affected the thermally deactivated behavior of the a-IGZO TFTs, which is different from the case of a-IGZO TFTs having conventional metal electrodes.