Cite
HARVARD Citation
Fiorenza, P. et al. (2020). Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress. Nanotechnology. p. . [Online].
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Fiorenza, P. et al. (2020). Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress. Nanotechnology. p. . [Online].