Hierarchical flower-like Cu3BiS3 thin film synthesis with non-vacuum chemical bath deposition technique. (19th June 2019)

• Record Type: Journal Article
• Authors: Deshmukh, Sampat G; Kheraj, Vipul; Karande, Kailash J; Panchal, Ashish K; Deshmukh, Rohan S
• Is Part Of: Materials research express. Volume 6:Number 8(2019)
• Publication Date: 2019-06-19
• Subjects: Cu3BiS3 -- CBD -- SEM -- Raman -- hydrophobic; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/ab283f
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: Now-a-days, the progress of thin film semiconductor devices such as CdTe, Cu(In, Ga)Se2 has remarkable development in the field of thin film photovoltaics. The toxicity of cadmium and limited availability of indium impose the search for alternative materials. At this juncture, Cu3 BiS3 is one of the promising emerging materials with favorable properties like high absorption coefficient and direct bandgap. Furthermore, the entire ingredients essential for Cu3 BiS3 synthesis are cost effective, non-toxic and plenteously accessible in the Earth's crust. In the present work, hierarchical flower-like Cu3 BiS3 thin films were effectively synthesized on a glass substrate by non-vacuum chemical bath deposition method. The XRD approves the amorphous nature of hierarchical flower-like Cu3 BiS3 thin films. Raman spectrum ensured the pure phase of Cu3 BiS3 by major vibrational peaks at 285 and 468 cm −1 . Moreover, SEM shows the formation of hierarchical flower-like nanostructure of Cu3 BiS3 thin films. Wettability study of Cu3 BiS3 thin films exhibited hydrophobic behavior. The absorption coefficient and the optical bandgap of Cu3 BiS3 thin films were found to be 10 5 cm −1 and 1.73 eV respectively. These hierarchical flower-like Cu3 BiS3 thin films may be useful as absorbing layer in the photovoltaic solar cell.