Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC–DC converters. (25th April 2019)

• Record Type: Journal Article
• Authors: Cui, Miao; Bu, Qinglei; Cai, Yutao; Sun, Ruize; Liu, Wen; Wen, Huiqing; Lam, Sang; Liang, Yung C.; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R.; Zhao, Cezhou
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 5(2019)
• Publication Date: 2019-04-25
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab1313
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Power integration is essential for the fully utilization of advanced GaN devices in power conversion applications due to the reduced parasitic inductance, low on-state resistance, and high-temperature operation. This paper presents a GaN-based monolithic integration design with optimized gate drivers for high-temperature DC–DC converters. Four different gate drivers are experimentally evaluated for integration with boost converters based on enhancement (E)-mode AlGaN/GaN metal–insulator–semiconductor heterojunction-field-effect-transistors (MIS-HFETs). The optimized gate driver, consisting of DCFL (Direct-Coupled FET Logic) inverters and a buffer amplifier, can operate over a wide temperature range (from 25 °C to 250 °C). Furthermore, a 100 kHz, 5 V/11 V ( V IN / V OUT ) boost converter prototype with the proposed monolithic integration design was built and found to operate successfully under high temperatures (HTs) up to 250 °C. These results validate the advantages of GaN-based monolithic integration techniques in achieving HT, high power density, and high efficiency power converters.