Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method. (25th April 2019)

• Record Type: Journal Article
• Authors: Hamachi, Takeaki; Tohei, Tetsuya; Imanishi, Masayuki; Mori, Yusuke; Sakai, Akira
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 5(2019)
• Publication Date: 2019-04-25
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab14f9
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We have investigated the local electrical and structural properties of threading dislocations (TDs) in Na-flux-grown GaN bulk single crystals that consist entirely of c -plane growth sectors. Conductive atomic force microscopy analysis of Schottky-like contacts locally fabricated on dislocation-related etch pits showed a variety of leakage current under reverse bias conditions. Microstructural analysis around TDs revealed a correlation between the current leakage and the structure of the TDs and their surroundings. Microscale faceted growth sectors with a higher oxygen impurity concentration locally formed in the vicinity of TDs had a larger influence on the current leakage than the structure of TDs.