Cite
HARVARD Citation
Lorenzi, P. et al. (2015). Conductive filament evolution in HfO2 resistive RAM device during constant voltage stress. Microelectronics and reliability. 55 (9), pp. 1446-1449. [Online].
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Lorenzi, P. et al. (2015). Conductive filament evolution in HfO2 resistive RAM device during constant voltage stress. Microelectronics and reliability. 55 (9), pp. 1446-1449. [Online].