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HARVARD Citation
Divay, A. et al. (2015). An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors. Microelectronics and reliability. 55 (9), pp. 1703-1707. [Online].
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Divay, A. et al. (2015). An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors. Microelectronics and reliability. 55 (9), pp. 1703-1707. [Online].