Cite
HARVARD Citation
Munteanu, D. et al. (2015). 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs. Microelectronics and reliability. 55 (9), pp. 1522-1526. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Munteanu, D. et al. (2015). 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs. Microelectronics and reliability. 55 (9), pp. 1522-1526. [Online].