Modeling defect transport during Cu oxidation. (October 2015)

• Record Type: Journal Article
• Authors: Goldstein, Eli A.; Gür, Turgut M.; Mitchell, Reginald E.
• Is Part Of: Corrosion science. Volume 99(2015)
• Page Start: 53
• Page End: 65
• Publication Date: 2015-10
• Subjects: Copper -- Oxidation -- Modeling studies -- High temperature corrosion -- Kinetic parameters; Corrosion and anti-corrosives -- Periodicals; 620.11223
• DOI: 10.1016/j.corsci.2015.05.067
• Languages: English
• ISSNs: 0010-938X

Abstract

Graphical abstract: Highlights: Copper oxidation is studied in high temperature, oxygen rich environments. A fundamental model of Cu oxidation, based on defect chemistry is developed. Vacancy diffusion coefficients in cuprous and cupric oxide are determined. The reaction enthalpy of vacancies in CuO is estimated. Abstract: A defect transport model describing Cu oxidation kinetics to Cu2 O and CuO is presented. The model supports findings that the dominant defects in Cu2 O are singly charged and neutral copper vacancies, and in CuO doubly charged copper vacancies. In this work, CuO is treated as a charge transfer insulator and from the model a reaction enthalpy for Cu vacancies in CuO was estimated to be 250 ± 10 kJ/mole. Using the model, defect-diffusion coefficients are extracted from copper oxidation experiments and activation energies for vacancy-diffusion in Cu2 O and CuO were found to be 54 kJ/mole and 32 kJ/mole, respectively.