Control of p-type conductivity at AlN surfaces by carbon doping. (14th January 2020)

• Record Type: Journal Article
• Authors: Kishimoto, Katsuhiro; Funato, Mitsuru; Kawakami, Yoichi
• Is Part Of: Applied physics express. Volume 13:Number 1(2020)
• Publication Date: 2020-01-14
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab6589
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Carbon doping can form surface p-type conductive layers on AlN with high sheet carrier densities (∼10 13 cm −2 ). Current–voltage measurements indicate carrier injection occurs through the surface conductive layer into AlN, suggesting that the surface conductive layer may act as a p-contact layer for AlN-based materials. Mass spectroscopy reveals that the surface layers with p-type conductivity involve molecular species, including aluminum carbides and carbons, while those without p-type conductivity do not. Carbon-containing layers at AlN surfaces are responsible for surface p-type conduction.