Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films. (28th June 2019)

• Record Type: Journal Article
• Authors: Yatabe, Zenji; Nishiyama, Koshi; Tsuda, Takaaki; Nishimura, Kazuki; Nakamura, Yusui
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 7(2019)
• Publication Date: 2019-06-28
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab29e3
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Aluminum titanium oxide (Al1– x Ti x O y, an alloy of Al2 O3 and TiO2 ), an attractive high-κ dielectric material, was synthesized by mist chemical vapor deposition, utilizing Al2 O3 and TiO2 precursors. X-ray diffraction investigations revealed that the Al1– x Ti x O y (0 < x < 0.72) films deposited at 400 °C have an amorphous-phase structure. It was found that the bandgap of the Al1– x Ti x O y films decreases with increasing Ti composition. Moreover, the obtained refractive index, mass density and bandgap of Al2 O3 and TiO2 films are all comparable to those reported for high-quality Al2 O3 and TiO2 films deposited by atomic layer deposition.