Cite
HARVARD Citation
Irekti, M. et al. (2019). 2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz. Semiconductor science and technology. p. . [Online].
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Irekti, M. et al. (2019). 2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz. Semiconductor science and technology. p. . [Online].