Antiferromagnetic coupling of van der Waals ferromagnetic Fe3GeTe2. (26th March 2019)

• Record Type: Journal Article
• Authors: Kim, Dongseuk; Park, Sijin; Lee, Jinhwan; Yoon, Jungbum; Joo, Sungjung; Kim, Taeyueb; Min, Kil-joon; Park, Seung-Young; Kim, Changsoo; Moon, Kyoung-Woong; Lee, Changgu; Hong, Jisang; Hwang, Chanyong
• Is Part Of: Nanotechnology. Volume 30:Number 24(2019)
• Publication Date: 2019-03-26
• Subjects: van der Waals ferromagnet -- antiferromagnetic coupling -- negative remanence; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ab0a37
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Among two-dimensional (2D) layered van der Waals materials, ferromagnetic 2D materials can be useful for compact low-power spintronic applications. One promising candidate material is Fe3 GeTe2 (FGT), which has a strong perpendicular magnetic anisotropy and relatively high Curie temperature. In this study, we confirmed that an oxide layer (O-FGT) naturally forms on top of exfoliated FGT and that an antiferromagnetic coupling (AFC) exists between FGT and O-FGT layers. From a first-principles calculation, oxide formation at the interface of each layer induces an AFC between the layers. An AFC causes a tailed hysteresis loop, where two-magnetization reversal curves are included, and a negative remanence magnetization at a certain temperature range.