The growth and band structure of a graphene-encapsulated two-dimensional nodal line semimetal: Cu2Si. (25th February 2019)

• Record Type: Journal Article
• Authors: Roth, S; Gatti, G; Crepaldi, A; Grioni, M
• Is Part Of: Electronic structure. Volume 1:Number 1(2019)
• Publication Date: 2019-02-25
• Subjects: Cu2Si -- ARPES -- nodal-line; Electronic structure -- Periodicals; 530.411
• DOI: 10.1088/2516-1075/ab02a3
• Languages: English
• ISSNs: 2516-1075

Abstract

Abstract: Nodal-line Dirac semimetals are a novel class of quantum materials, where valence and conduction bands form linearly dispersing cones that are degenerate along a closed line in the Brillouin zone. Recently, single-layer Cu2 Si was proposed as the first two-dimensional nodal-line semimetal. Here we demonstrate the formation of Cu2 Si encapsulated between a graphene layer and a Cu(1 1 1) substrate, and investigate the electronic states of this heterostructure. We find that the Cu2 Si-graphene interaction is negligible and show that, as a result, the graphene layer is electronically decoupled from the substrate.