Sandwich method to grow high quality AlN by MOCVD. (7th February 2018)
- Record Type:
- Journal Article
- Title:
- Sandwich method to grow high quality AlN by MOCVD. (7th February 2018)
- Main Title:
- Sandwich method to grow high quality AlN by MOCVD
- Authors:
- Demir, I
Li, H
Robin, Y
McClintock, R
Elagoz, S
Razeghi, M - Abstract:
- Abstract: We report pulsed atomic layer epitaxy growth of a very high crystalline quality, thick (~2 µ m) and crack-free AlN material on c -plane sapphire substrates via a sandwich method using metal organic chemical vapor deposition. This sandwich method involves the introduction of a relatively low temperature (1050 °C) 1500 nm thick AlN layer between two 250 nm thick AlN layers which are grown at higher temperature (1170 °C). The surface morphology and crystalline quality remarkably improve using this sandwich method. A 2 µ m thick AlN layer was realized with 33 arcsec and 136 arcsec full width at half maximum values for symmetric ( 0 0 0 2 ) and asymmetric ( 1 0 1 ̄ 5 ) reflections of ω -scan, respectively, and it has an atomic force microscopy root-mean-square surface roughness of ~0.71 nm for a 5 × 5 µ m 2 surface area.
- Is Part Of:
- Journal of physics. Volume 51:Number 8(2018)
- Journal:
- Journal of physics
- Issue:
- Volume 51:Number 8(2018)
- Issue Display:
- Volume 51, Issue 8 (2018)
- Year:
- 2018
- Volume:
- 51
- Issue:
- 8
- Issue Sort Value:
- 2018-0051-0008-0000
- Page Start:
- Page End:
- Publication Date:
- 2018-02-07
- Subjects:
- AlN -- MOCVD -- epitaxy
Physics -- Periodicals
530 - Journal URLs:
- http://ioppublishing.org/ ↗
http://iopscience.iop.org/0022-3727 ↗ - DOI:
- 10.1088/1361-6463/aaa926 ↗
- Languages:
- English
- ISSNs:
- 0022-3727
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 19243.xml