Sandwich method to grow high quality AlN by MOCVD. (7th February 2018)

• Record Type: Journal Article
• Authors: Demir, I; Li, H; Robin, Y; McClintock, R; Elagoz, S; Razeghi, M
• Is Part Of: Journal of physics. Volume 51:Number 8(2018)
• Publication Date: 2018-02-07
• Subjects: AlN -- MOCVD -- epitaxy; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aaa926
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We report pulsed atomic layer epitaxy growth of a very high crystalline quality, thick (~2 µ m) and crack-free AlN material on c -plane sapphire substrates via a sandwich method using metal organic chemical vapor deposition. This sandwich method involves the introduction of a relatively low temperature (1050 °C) 1500 nm thick AlN layer between two 250 nm thick AlN layers which are grown at higher temperature (1170 °C). The surface morphology and crystalline quality remarkably improve using this sandwich method. A 2 µ m thick AlN layer was realized with 33 arcsec and 136 arcsec full width at half maximum values for symmetric ( 0 0 0 2 ) and asymmetric ( 1 0 1 ̄ 5 ) reflections of ω -scan, respectively, and it has an atomic force microscopy root-mean-square surface roughness of ~0.71 nm for a 5 × 5 µ m 2 surface area.