Large-area synthesis of 2D MoO3−x for enhanced optoelectronic applications. (16th May 2019)

• Record Type: Journal Article
• Authors: Arash, Aram; Ahmed, Taimur; Govind Rajan, Ananth; Walia, Sumeet; Rahman, Fahmida; Mazumder, Aishani; Ramanathan, Rajesh; Sriram, Sharath; Bhaskaran, Madhu; Mayes, Edwin; Strano, Michael S; Balendhran, Sivacarendran
• Is Part Of: 2D materials. Volume 6:Number 3(2019)
• Publication Date: 2019-05-16
• Subjects: molybdenum oxide -- 2D semiconductors -- UV sensing -- large area synthesis -- vapor deposition; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/ab1114
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: Two-dimensional (2D) molybdenum trioxide has been attracting research interest due to its bandgap tunability and a wide variety of desirable electronic/optoelectronic properties. However, the lack of a reproducible synthesis process for obtaining large coverage 2D MoO3 has limited the use of this material. Here we report the synthesis of large area 2D MoO3− x via physical vapor deposition, using MoO3 powder as the precursor. The as-grown layers are directly deposited on SiO2 /Si, eliminating the necessity for any transfer process. These as-grown MoO3− x layers allow for the large-scale fabrication of planar device arrays. The applicability of 2D MoO3− x in optoelectronics is established via the demonstration of low-power ultraviolet (UV) sensor arrays, with rapid response times (200 µ s) and responsivity up to 54.4 A · W −1 . At a bias voltage of 0.1 V, they are at least 400 times more power efficient than their next best contender.