Design of high performance MoS2-based non-volatile memory via ion beam defect engineering. (9th April 2019)

• Record Type: Journal Article
• Authors: Chen, Rui; Liu, Qinru; Liu, Jing; Zhao, Xiaolong; Liu, Jiangchao; He, Lanli; Wang, Jing; Li, Wenqing; Xiao, Xiangheng; Jiang, Changzhong
• Is Part Of: 2D materials. Volume 6:Number 3(2019)
• Publication Date: 2019-04-09
• Subjects: 2D materials -- charge-trap memory -- MoS2; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/ab115c
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: Nonvolatile charge trap memory is an important part of the continuous development of information technology. As a 2-dimensional (2D) material with fantastic physical characteristics, molybdenum disulfide (MoS2 ) has been receiving extensive attention for its potential applications in electronic devices. However, while various attempts have been made to devise its charge-trap gate stack, it's still impossible to avoid a certain performance degradation. Here, a MoS2 -based nonvolatile charge trapping memory device with a charge-trap gate stack formed by implanting N ions into SiO2 is reported. The fabricated N-implanted memory devices with the energy of 6.5 keV and the dose of 1 × 10 15 ions cm −2 exhibit a high on/off current ratio up to 10 7, a large memory window of 9.1 V, and a high program/erase speed of 10/100 µ s. Moreover, the memory device shows an excellent cycling endurance of more than 10 4 cycles. By combining the MoS2 channel with the N-implanted charge-trap gate stack, this research opens up a fascinating field of nonvolatile charge trap memory devices.