Cite
HARVARD Citation
Sun, C. et al. (2019). Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment. Applied physics express. p. . [Online].
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Sun, C. et al. (2019). Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment. Applied physics express. p. . [Online].