Oxidation behavior of amorphous silicon nitride nanoparticles. Issue 2 (1st February 2018)

• Record Type: Journal Article
• Authors: Ma, D.H.; Wang, H.J.; Niu, M.; Wen, J.B.; Wei, H.; Zhou, J.; Fan, J.P.; Zhang, D.H.
• Is Part Of: Ceramics international. Volume 44:Issue 2(2018)
• Page Start: 1443
• Page End: 1447
• Publication Date: 2018-02-01
• Subjects: Amorphous nanoparticles -- Vacancy oxidation -- Replacement oxidation; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2017.10.022
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Silicon oxynitride is a promising structural/functional material for high temperature applications. Silicon oxynitride can be synthesized through oxidation of amorphous silicon nitride (ASN) nanoparticles followed by a crystallization process. Oxidation of the ASN plays an important role during the synthesis. Here we investigated its oxidation mechanism in an atomic scale using experimental and modelling method. The results of Nitrogen-Oxygen analyzer and X-ray photoelectron spectroscopy indicate that a large amount of nitrogen vacancies exist in ASN, thus oxidation of ASN may include vacancy oxidation ( oxygen atoms move into the nitrogen vacancies) and replacement oxidation ( oxygen atoms replace nitrogen atoms). A model has been made to describe these two oxidation processes, from which the activation energy (Ea ) of the vacancy oxidation and replacement oxidation is calculated to be 9.09 kJ/mol and 118.25 kJ/mol, respectively. These values agree well with Ea calculated from well-designed experiments, confirming the existence of the two different mechanisms during oxidation of ASN.