Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device. Issue 15 (15th October 2018)

• Record Type: Journal Article
• Authors: Wang, Xiaojun; Sun, Bai; Li, Xiaoxia; Guo, Bolin; Zeng, Yushuang; Mao, Shuangsuo; Zhu, Shouhui; Xia, Yudong; Tian, Shu; Luo, Weiting
• Is Part Of: Ceramics international. Volume 44:Issue 15(2018)
• Page Start: 18108
• Page End: 18112
• Publication Date: 2018-10-15
• Subjects: g-C3N4 powder -- Voltage window -- Resistive switching -- Nonvolatile -- Memory device; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2018.07.016
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: The resistance change of an insulator or semiconductor under applied current or voltage is defined as resistive switching effect, which is a significative physical performance in the exploit of new concept nonvolatile resistance random access memory (RRAM). In our work, the g-C3 N4 powder was firstly fabricated by calcination method, and continuously a device with Ag/g-C3 N4 /FTO structure was prepared using drop-coated g-C3 N4 powder to form a film onto FTO. It can be observed that the as-prepared cell exhibits an excellent resistive switching memory characteristic (HRS/LRS resistance ratio can be reached to ~ 52) and good reliability under applied voltage window of 4.0 V. Finally, it is believed that the space charge limited conduction is appropriate to understanding such the memory behavior.