Evolution of Filament Formation in Ni/HfO2/SiOx/Si‐Based RRAM Devices. (9th October 2015)

• Record Type: Journal Article
• Authors: Wu, Xing; Mei, Sen; Bosman, Michel; Raghavan, Nagarajan; Zhang, Xixiang; Cha, Dongkyu; Li, Kun; Pey, Kin Leong
• Is Part Of: Advanced Electronic Materials. Volume 1:Number 11(2015:Nov.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-10-09
• Subjects: in situ transmission electron microscopy -- metal nanofilaments -- resistive random access memory -- energy dispersive X‐ray spectrometry; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201500130
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : The evolution of metal nanofilaments formed in dielectric layers of Ni/HfO2 /SiO x /n + Si stacks and the role of Ni atoms during SET (low resistance) and RESET (high resistance) are quantitatively studied. The shape of the filaments is confirmed as conical with a broader distribution in HfO2 after a positive switching voltage is applied to the Ni electrode during SET. Residual Ni atoms are detected in the dielectric layers after RESET.