Resistive Switching Effects of Crystal‐Ion‐Slicing Fabricated LiNbO3 Single Crystalline Thin Film on Flexible Polyimide Substrate (Adv. Electron. Mater. 9/2021). (9th September 2021)

• Record Type: Journal Article
• Authors: Huang, Shitian; Luo, Wenbo; Pan, Xinqiang; Zhao, Jinyan; Qiao, Shijun; Shuai, Yao; Zhang, Kaisheng; Bai, Xiaoyuan; Niu, Gang; Wu, Chuangui; Zhang, Wanli
• Is Part Of: Advanced Electronic Materials. Volume 7:Number 9(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-09-09
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202170036
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : High‐performance Flexible Memristor In article number 2100301 by Wenbo Luo, Xinqiang Pan, and co‐workers, high‐performance flexible memristor on polyimide substrate based on single crystalline LiNbO3 thin film using Crystal‐ion‐slicing technology is demonstrated. This flexible memristor which could be integrated with other flexible electronic devices and flexible circuits can become a promising candidate for memory and neuromorphic computing.