A Sensitivity Controllable Thermopile Infrared Sensor by Monolithic Integration of a N-channel Metal Oxide Semiconductor. (27th September 2021)

• Record Type: Journal Article
• Authors: Li, Hongbo; Xu, Gaobo; Zhang, Chenchen; Mao, Haiyang; Zhou, Na; Chen, Dapeng
• Is Part Of: ECS journal of solid state science and technology. Volume 10:Number 9(2021)
• Publication Date: 2021-09-27
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac26d6
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : We report a sensitivity controllable infrared (IR) sensor composed of a thermopile and a n-channel metal oxide semiconductor (NMOS). In the sensor, the cathode of the thermopile is connected with the gate of NMOS. Such a sensor is fabricated by using a CMOS-compatible monolithic integration process. Compared with the separate thermopile IR sensor, sensitivity of the thermopile IR sensor integrated with NMOS can be remarkably enhanced by 357%. In addition, the drain bias voltage of the NMOS can be employed as a quick-response switch. The fabrication process of this device is quite simple and compatible with CMOS processes, thus such a thermopile IR sensor integrated with NMOS is low-cost and suitable for mass production. Moreover, the integration approach can be further applied to develop thermopile arrays for high-resolution imaging.