Influence of traps on the gate reverse characteristics of normally-off high-electron-mobility transistors with regrown p-GaN gate. (28th September 2021)

• Record Type: Journal Article
• Authors: Chen, Xin; Zhong, Yaozong; Guo, Xiaolu; Yan, Shumeng; Zhou, Yu; Su, Shuai; Gao, Hongwei; Zhan, Xiaoning; Zhang, Zihui; Bi, Wengang; Sun, Qian; Yang, Hui
• Is Part Of: Applied physics express. Volume 14:Number 10(2021)
• Publication Date: 2021-09-28
• Subjects: p-GaN gate -- gate leakage -- acceptor trap -- high electron mobility transistors; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac279c
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: The influence of traps on the reverse gate leakage has been studied for two kinds of normally-off high-electron-mobility transistors with regrown p-GaN gate. Different acceptor traps in the p-GaN/AlGaN/GaN junction dramatically impact carrier behaviors, affecting the leakage mechanisms. The reverse gate current of the normal devices with a low density of traps which located at E V + 0.6 eV is dominated by Poole–Frenkel process. For the abnormal devices, a high density of new traps have been confirmed with an energy level of ∼0.8 eV, resulting in a trap-assisted tunneling thus a relatively high reverse gate leakage.