Grain‐Boundary Engineering of Monolayer MoS2 for Energy‐Efficient Lateral Synaptic Devices (Adv. Mater. 32/2021). Issue 32 (12th August 2021)

• Record Type: Journal Article
• Authors: Wang, Xuewen; Wang, Bolun; Zhang, Qinghua; Sun, Yufei; Wang, Enze; Luo, Hao; Wu, Yonghuang; Gu, Lin; Li, Huanglong; Liu, Kai
• Is Part Of: Advanced materials. Volume 33:Issue 32(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-08-12
• Subjects: artificial synapses -- grain‐boundary engineering -- low energy consumption -- monolayer molybdenum disulfide -- switching mechanisms; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202170251
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Synaptic Devices With lithography‐free, directlaser‐writing‐controlled MoS2 /MoS2− x Oδ grain boundaries, synaptic devices fabricated by Kai Liu and co‐workers, as described in article number 2102435, exhibit short‐term and long‐term plasticity characteristics that are responsive to electric and light stimulation simultaneously; they also exhibit a low energy consumption that is over 40 times lower than that of conventional complementary metal–oxide–semiconductors