Cite
HARVARD Citation
Cheng, H. et al. (2020). Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions. Advanced Electronic Materials. p. n/a. [Online].
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Cheng, H. et al. (2020). Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions. Advanced Electronic Materials. p. n/a. [Online].