High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces. Issue 6 (20th February 2020)

• Record Type: Journal Article
• Authors: Disa, Ankit S.; Walker, Frederick J.; Ahn, Charles H.
• Is Part Of: Advanced materials interfaces. Volume 7:Issue 6(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-02-20
• Subjects: atomic structure -- crystal truncation rod scattering -- oxide interfaces -- X‐ray diffraction; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201901772
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: In crystalline materials, the presence of surfaces or interfaces gives rise to crystal truncation rods (CTRs) in their X‐ray diffraction patterns. While structural properties related to the bulk of a crystal are contained in the intensity and position of Bragg peaks in X‐ray diffraction, CTRs carry detailed information about the atomic structure at the interface. Developments in synchrotron X‐ray sources, instrumentation, and analysis procedures have made CTR measurements into extremely powerful tools to study atomic reconstructions and relaxations occurring in a wide variety of interfacial systems, with relevance to chemical and electronic functionalities. In this review, an overview of the use of CTRs in the study of atomic structure at interfaces is provided. The basic theory, measurement, and analysis of CTRs are covered and applications from the literature are highlighted. Illustrative examples include studies of complex oxide thin films and multilayers. Abstract : X‐ray crystal truncation rod (CTR) scattering provides high‐resolution information on the atomic structure of surfaces, interfaces, and thin films. This review provides an up‐to‐date perspective on this established technique. In addition to describing basic principles and measurement strategies, it covers recent technical advances and modern applications of CTR scattering for picoscale characterization of surfaces and heterostructures of complex materials.