A low-voltage gain boosting-based current mirror with high input/output dynamic range. (August 2019)

• Record Type: Journal Article
• Authors: Doreyatim, Mohamadsaeed; Akbari, Meysam; Nazari, Masoud; Mahani, Sina
• Is Part Of: Microelectronics journal. Volume 90(2019)
• Page Start: 88
• Page End: 95
• Publication Date: 2019-08
• Subjects: Gain-boosting -- Current mirror -- Swing -- Resistance -- Current transfer error; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2019.05.022
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: This paper presents a bulk-driven current mirror circuit based on the gain-boosting technique to achieve high input/output dynamic range and high output resistance. The bulk-driven based diode-connected transistor at the input removes the threshold voltage limitation to provide low headroom voltage on the basic transistors. In addition, the auxiliary circuit used in the first gain-boosting structure is a current mode amplifier that is driven by draining current from the main circuit to remove threshold voltage limitation on the input/output swing. In order to achieve higher output resistance, the second gain-boosting structure includes a voltage mode amplifier without creating any limitation on the output swing. Simulation results in a 0.18 ​μm CMOS technology show a maximum output voltage swing of 0.9 ​V under a 1 ​V supply, while the input and output resistances are 68.3 ​Ω and 10.5 ​GΩ, respectively. The current transfer error also changes between −0.085% and +0.075% for an input current range of 1000 ​μA.