Cite
HARVARD Citation
Ghosh, S. et al. (2019). Study of circuit performance and non quasi static effect in germanium tunnel FET for different temperatures. Microelectronics journal. pp. 204-210. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Ghosh, S. et al. (2019). Study of circuit performance and non quasi static effect in germanium tunnel FET for different temperatures. Microelectronics journal. pp. 204-210. [Online].