Synthesis of Zn0·1Cd0·9S heterostructure with N-doped graphene quantum dots and graphene for enhancing photoelectric performance in UV–visible light. Issue 10 (July 2020)

• Record Type: Journal Article
• Authors: Jiang, Zicong; Lei, Yun; Lin, Yuanyuan; Hu, Jiaxin; Ouyang, Zhong
• Is Part Of: Ceramics international. Volume 46:Issue 10(2020)Part B
• Page Start: 15801
• Page End: 15811
• Publication Date: 2020-07
• Subjects: Zn0.1Cd0·9S -- N-GQDs -- Graphene -- Photoelectric properties; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2020.03.127
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: In the present study, a heterostructure based on Zn0·1 Cd0·9 S, N-doped graphene quantum dots (N-GQDs), and graphene was successfully prepared by a simple method. Various analyses are conducted to determine the structure, morphology, and materials performance of the synthesized composite. The results exhibit that the Zn0·1 Cd0·9 S/N-GQDs/graphene heterostructure presents excellent photoelectric performance with a high photocurrent of 4.43 × 10 −5 A/cm 2 and 3.43 × 10 −5 A/cm 2 under light irradiation of 365 nm and 405 nm, respectively. It demonstrates a two-fold photocurrent enhancement in comparison to blank Zn0·1 Cd0.9 S. This remarkable improvement is ascribed to a mechanism in which the N-GQDs act as photosensitizers, enhancing the absorption ability. Concurrently, graphene serves as a carrier mobility substrate, facilitating the separation of the photogenerated electron–hole pairs. The synergetic effect between Zn0·1 Cd0·9 S, the N-GQDs, and graphene enhances the photoelectric performance. The Zn0·1 Cd0·9 S/N-GQDs/graphene heterostructure provides a new route for the enhancement of the photoelectric performance of a semiconductor under UV–visible light.