Cite
HARVARD Citation
Cai, L. et al. (n.d.). Growth mechanism of porous 3C–SiC films prepared via laser chemical vapor deposition. Ceramics international. 46 (10), pp. 16518-16523. [Online].
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Cai, L. et al. (n.d.). Growth mechanism of porous 3C–SiC films prepared via laser chemical vapor deposition. Ceramics international. 46 (10), pp. 16518-16523. [Online].