The role of oxygen vacancies on the weak localization in LaNiO3-δ epitaxial thin films. (December 2018) - Walke, P.
Abstract: We report on the analysis of weak localization observed in epitaxial films of LaNiO3-δ deposited coherently on SrTiO3 (001) substrates using different oxygen pressures, controlling thus the oxygen stoichiometry δ. The structural and transport properties of 10 nm thick LaNiO3-δ films were investigated. In the films deposited under the lowest oxygen pressures, we observe localization effects at low temperatures, indicating first a high structural quality of the films, and second an influence of the growth conditions on the quantum transport properties of the nickelate. We will discuss the origin as well as the dimensionality of this effect, giving insight into novel and accurate strategies for the design of ultrathin LaNiO3 electrodes for improved next generation electronics devices. Highlights: The significant effect of oxygen pressure during epitaxial film growth is studied. The structural, electrical properties and film growth conditions are investigated. The films deposited at low oxygen pressure exhibits weak localization. The quantum transport in the nickelate films and their film growth are discussed.