32.4: Abnormal Turnaround Phenomenon of Threshold Voltage Shifts in Bias‐Stressed a‐Si:H Thin Film Transistor under Extremely High Intensity Illumination. (26th August 2021)

• Record Type: Journal Article
• Authors: liu, Chunming; Jiang, Zhixiong; Xu, Hongyuan; Zhang, Jiping; Son, Woosung
• Is Part Of: Digest of technical papers. Volume 52(2021)Supplement 2
• Page Start: 432
• Page End: 435
• Publication Date: 2021-08-26
• Subjects: Amorphous silicon -- thin film transistor -- Vth -- electron traps -- high intensity illumination; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.15150
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : The abnormal threshold voltage (Vth) turnaround behavior of a‐Si:H TFTs was investigated when biased under extremely high intensity illumination. TFTs with various compositions of gate insulator (SiNx) interface layer were fabricated to avoid this abnormal behavior and enhance reliability upon high intensity illumination. 500‐hours RA results confirmed that our optimization strategy can effectively improve the reliability of TFT‐LCDs.