15.3: Low Voltage InGaZnO Thin‐Film Transistors and Logic Circuits Using Ultra‐Thin, Solution‐Processed AlxOy Gate Dielectrics. (26th August 2021)

Record Type:: Journal Article
Title:: 15.3: Low Voltage InGaZnO Thin‐Film Transistors and Logic Circuits Using Ultra‐Thin, Solution‐Processed AlxOy Gate Dielectrics. (26th August 2021)
Main Title:: 15.3: Low Voltage InGaZnO Thin‐Film Transistors and Logic Circuits Using Ultra‐Thin, Solution‐Processed AlxOy Gate Dielectrics
Authors:: Lin, Xiaoyu
Zhang, Jiawei
Abstract:
Is Part Of:: Digest of technical papers. Volume 52(2021)Supplement 2
Journal:: Digest of technical papers
Issue:: Volume 52(2021)Supplement 2
Issue Display:: Volume 52, Issue 2 (2021)
Year:: 2021
Volume:: 52
Issue:: 2
Issue Sort Value:: 2021-0052-0002-0000
Page Start:: 210
Page End:: 210
Publication Date:: 2021-08-26
Subjects:: Information display systems -- Congresses
621.3815422
Journal URLs:: http://catalog.hathitrust.org/api/volumes/oclc/1799368.html ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2168-0159 ↗
http://ojps.aip.org/dbt/dbt.jsp?KEY=SIDSYM ↗
http://sid.aip.org/digest ↗
http://onlinelibrary.wiley.com/ ↗
DOI:: 10.1002/sdtp.15068 ↗
Languages:: English
ISSNs:: 0097-966X
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - 8271.680000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store
Ingest File:: 18676.xml