25.4: Contact Model Analysis of GaN‐based Micro Light Emitting Diodes (Micro‐LEDs) With Distinct Structures and Bonding Pads. (26th August 2021)

• Record Type: Journal Article
• Authors: Liu, Yibo; Zhang, Ke; Feng, Feng; Chan, Ka-Wah; Liu, Zhaojun; Kwok, Hoi Sing
• Is Part Of: Digest of technical papers. Volume 52(2021)Supplement 2
• Page Start: 339
• Page End: 343
• Publication Date: 2021-08-26
• Subjects: GaN-based Micro-LEDs -- gold and aluminum contact -- injection current -- leakage current -- radiometric power -- luminous flux; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.15116
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : In this paper, the contact model analysis based on gold (Au) and aluminum (Al) with distinct structures and bonding pads of GaN‐based Micro‐LED was proposed. Firstly, the fabrication process and three different structures (testing, bottom emitting and top emitting structures) with 30–200 µm size were introduced. Then, the electrical properties of testing structure were analyzed by extracting the series resistances and ideality factors. Next, the performances of two metals with bottom and top emitting structures were evaluated electrically and optically throughout the injection current at forward bias, leakage current at reverse bias, radiometric power and luminous flux. The final results indicated Au contact is superior to Al for the indium bonding pads on Micro‐LEDs.