34.1: Invited Paper: Availability of a‐IGZO semiconductor TFT in the large size Gen. 11 facilities for competitive high‐end applications. (26th August 2021)

• Record Type: Journal Article
• Authors: Seo, Hyun-Sik; Sun, Qianhui; Wu, Wei; Hsu, Yuan-Jun; Li, Shan; Cao, Weiran; Xiao, Jun Cheng; Wu, Yuan-Chun; Zhao, Bin; Zhang, Xin; Yan, Xiaolin
• Is Part Of: Digest of technical papers. Volume 52(2021)Supplement 2
• Page Start: 450
• Page End: 453
• Publication Date: 2021-08-26
• Subjects: Oxide-Semiconductor TFTs -- BCE 4 Mask -- Self-Aligned Coplanar -- 8K4K -- AMLCD -- AMOLED; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.15157
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We investigated the four‐phase amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in the world largest generation 11 factory (Gen.11, 2940mm × 3370mm) which has the cost advantage for future high‐end applications compared to generation 8.5 (Gen. 8.5, 2200mm × 2500mm). Self‐aligned coplanar structure TFT has been developed for large size inkjet printing (IJP) OLED display, and 4 mask back channel etched (BCE) type TFT has been developed for large size 8K4K LCD applications. For the purpose of low cost, high‐end applications, the availability of large size oxide TFT is essential in Gen. 11.