Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs. (2021)

• Record Type: Journal Article
• Authors: Kumar, Dinesh; Gomes, Tiago; Misra, Neeraj Kumar; Sahu, Anil Kumar; Kettle, J.
• Is Part Of: Materials today. Volume 46:Part 12(2021)
• Page Start: 5757
• Page End: 5760
• Publication Date: 2021
• Subjects: ZnO TFTs -- Mobility -- Metal oxide -- Optimization -- Taguchi Orthogonal Array (OA); Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2021.02.710
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: This study applies the Taguchi orthogonal array (OA) to improve and optimize the performance of ZnO thin-film transistors (TFT). Radiofrequency (RF) sputtering method was used to deposit the active layer of TFTs. The annealing temperature, environmental conditions, sputter rate, and thin-film thickness were the parameters whose impact on output parameters like mobility was analyzed in the process optimization using design of experiment (DOE). The ZnO TFTs show state-of-the-art performance features, including high saturation mobility (0.83c), high Ion /Ioff ratio (10 4 ). The optimal configuration was found to be high annealing temperature 450 °C under N2 atmosphere, low sputter rate. This paper presents a method that can empower the fast optimization of metal oxide TFTs for future developments in the manufacturing process. If a full factorial design had been implemented, 64 tests would have been necessary, however in this work, we have reduced the number of tests to 9 only using Taguchi method.