Synaptic transistors with human brain-like fJ energy consumption via double oxide semiconductor engineering for neuromorphic electronics. Issue 32 (12th July 2021)

• Record Type: Journal Article
• Authors: Cho, Seong-In; Jeon, Jae Bum; Kim, Joo Hyung; Lee, Seung Hee; Jeong, Wooseok; Kim, Jingyu; Kim, Geunyoung; Kim, Kyung Min; Park, Sang-Hee Ko
• Is Part Of: Journal of materials chemistry. Volume 9:Issue 32(2021)
• Page Start: 10243
• Page End: 10253
• Publication Date: 2021-07-12
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d1tc01451j
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : This study proposes double oxide semiconductors as a strategy for human-brain like energy consuming synaptic transistor. IZO/IGZO synaptic transistor consumed a minimum energy of 0.269 fJ, and successfully mimicked various synaptic plasticity. Abstract : Neuromorphic devices that mimic a human brain have attracted significant attention in the field of next-generation semiconductors. The human brain can efficiently process information with low power consumption. Several energy efficient artificial synapses have been reported; however, the energy consumption of these synapses is significantly higher than that of the human brain (10 fJ). In this study, we propose the use of double oxide semiconductors for obtaining synaptic transistors with ultra-low energy consumption. The synaptic transistor comprising InZnO (IZO) and InGaZnO (IGZO) exhibits a high mobility and positive turn-on voltage, which are required for ultra-low energy consumption. SiO2 deposited at 200 °C by plasma enhanced atomic layer deposition is used as an electric double layer gate insulator. The IZO/IGZO synaptic transistor consumed an ultra-low energy of 0.269 fJ (gate voltage: 3.5 V, 1 ms and drain voltage: 3 mV). Furthermore, the synaptic transistor exhibits various synaptic plasticity features under the brain-like energy conditions, including excitatory post-synaptic current, paired-pulse facilitation, potentiation, and depression. All of the operations of the devices were performed under ambient conditions (25 °C, humidity 50%), in the dark probe station. The IZO/IGZO synaptic transistor exhibits similar energy efficiency to a human brain, and this strategy is expected to be utilized for the fabrication of various ultra-low energy consuming synaptic transistors.