Silicon-based two-dimensional chalcogenide of p-type semiconducting silicon telluride nanosheets for ultrahigh sensitive photodetector applications. Issue 32 (27th July 2021)

• Record Type: Journal Article
• Authors: Lin, Chang-Yu; Ulaganathan, Rajesh Kumar; Sankar, Raman; Murugesan, Raghavan Chinnambedu; Subramanian, Ambika; Rozhin, Alex; Firdoz, Shaik
• Is Part Of: Journal of materials chemistry. Volume 9:Issue 32(2021)
• Page Start: 10478
• Page End: 10486
• Publication Date: 2021-07-27
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d1tc02129j
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : We demonstrate an outstanding visible light photodetector fabricated with high-quality 2D silicon telluride single crystal grown by chemical vapor transport technique. Abstract : Two-dimensional (2D) materials have attracted significant attention in recent years owing to their exotic properties. Semiconducting p-type 2D crystals are crucial to the construction of versatile p–n junction-based nanoelectronic devices, and promising future optoelectronic applications. Herein, we reported the growth of high-quality p-type silicon telluride (Si2 Te3 ) single crystals using the chemical vapor transport (CVT) technique. Few layered Si2 Te3 nanosheets were obtained by mechanical exfoliation and used to fabricate a phototransistor device under a rigid silicon substrate. The Si2 Te3 nanosheet-based transistor exhibits an outstanding device performance, such as a high photoresponsivity of approximately 1396 A W −1 and a larger specific detectivity of approximately 2.52 × 10 12 Jones at a wavelength of 633 nm. The values obtained using the Si2 Te3 single crystal are remarkably superior to those obtained for the other chalcogenide 2D crystals, such as Bi2 Te3 and Sb2 Te3 . In addition, the normalized gain value of approximately 2.74 × 10 −4 V −1 cm 2 achieved using this field-effect transistor (FET) device is several orders higher than those of the other 2D single crystal-based FET devices. Our results suggest that the Si2 Te3 single crystal could be a benchmark candidate for the integration of prospective p–n junction circuits and photo-sensing applications.