Ternary‐Responsive Field‐Effect Transistors and Multilevel Memories Based on Asymmetrically Functionalized Janus Few‐Layer WSe2 (Adv. Funct. Mater. 36/2021). (2nd September 2021)

• Record Type: Journal Article
• Authors: Qiu, Haixin; Herder, Martin; Hecht, Stefan; Samorì, Paolo
• Is Part Of: Advanced functional materials. Volume 31:Number 36(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-09-02
• Subjects: 2D semiconductors -- ferroelectric materials -- high‐density memories -- multi‐stimuli‐responsive transistors -- photochromic diarylethene materials; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202170268
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : 2D Semiconductors In article number 2102721, Paolo Samorì and co‐workers report ternary‐responsive field‐effect transistors based on few‐layer WSe2 by decorating its two surfaces with photochromic diarylethene and ferroelectric poly(vinylidene fluoride–trifluoroethylene), respectively. This Janus architecture enables the modulation devices' output current by either light irradiation or an electric field, paving the way for their application as high‐density non‐volatile memories.