Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure. (3rd September 2021) - Tanaka, Shunya
Abstract: We report on a refractive-index waveguide AlGaN-based ultraviolet-B band (UV-B) laser diode grown on a sapphire substrate, which achieves a laser oscillation at a low threshold current ( I th ), ∼85 mA. The refractive index waveguide structure in a ridge-type structure is fabricated by a unique method combining dry inductively coupled plasma reactive ion etching and wet etching with tetramethylammonium hydroxide solution. Using this structure, the longitudinal-mode transverse optical confinement is successfully achieved, in which the ridge width is 3 μ m, demonstrating a low I th of UV-B laser diode.