Cite
HARVARD Citation
Ma, Q. et al. (2021). Impact of SiN passivation film stress on electroluminescence characteristics of AlGaN/GaN high-electron-mobility transistors. Applied physics express. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Ma, Q. et al. (2021). Impact of SiN passivation film stress on electroluminescence characteristics of AlGaN/GaN high-electron-mobility transistors. Applied physics express. p. . [Online].