Modulation of 1 MeV electron irradiation on ultraviolet response in MoS2 FET. (2nd September 2021)

• Record Type: Journal Article
• Authors: Li, Heyi; Liu, Chaoming; Zhang, Yanqing; Qi, Chunhua; Ma, Guoliang; Wang, Tianqi; Dong, Shangli; Huo, Mingxue
• Is Part Of: Nanotechnology. Volume 32:Number 47(2021)
• Publication Date: 2021-09-02
• Subjects: MoS2 -- electron irradiation -- PL -- Raman -- UV response; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ac1d79
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: The material, electrical and ultraviolet optoelectronic properties of few layers bottom molybdenum disulfide (MoS2 ) field effect transistors (FETs) device was investigated before and after 1 MeV electron irradiation. Due to the participation of SiO2 in conduction, we discovered novel photoelectric properties and a relatively long photogenerated carrier lifetime (several tens of seconds). Electron irradiation causes lattice distortion, the decrease of carrier mobility, and the increase of interface state. It leads to the degradation of output characteristics, transfer characteristics and photocurrent of the MoS2 FET.