Observation of antiferromagnetic ordering from muon spin resonance study and the Kondo effect in a Dy-doped Bi2Se3 topological insulator. (24th August 2021)

• Record Type: Journal Article
• Authors: Gangwar, Vinod K; Kumar, Shiv; Singh, Mahima; Singh, Prajyoti; Ghosh, Labanya; Pal, Debarati; Shahi, Prashant; Uwatoko, Yoshiya; Schwier, Eike F; Shimada, K; Sharma, Durgesh Kumar; Kumar, Sudhir; Chatterjee, Sandip
• Is Part Of: Journal of physics. Volume 54:Number 45(2021)
• Publication Date: 2021-08-24
• Subjects: topological insulator -- Kondo effect -- µ-SR measurements -- Angle resolved photo emission spectroscopy -- density functional theory calculations; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ac128f
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The transport and magnetic properties as well as the microscopic electronic properties of the Dy-doped topological insulator Bi2 Se3 (Bi1.9 Dy0.1 Se3 ) are examined in detail. It is demonstrated that Dy doping induces antiferromagnetic (AFM) ordering in Bi2 Se3 . It is also observed that Dy doping opens a surface band gap of ∼52 meV at 6.5 K. The transition from AFM to ferromagnetic occurs at a lower temperature, ∼5 K in a magnetic field of ∼3 T. Furthermore, Dy doping in Bi2 Se3 leads to the Kondo effect and weak localization to weak anti-localization crossover. Muon spin resonance measurements indicate that the signal measured with magnetization reflects the magnetic properties of 2% of the sample. The experimental findings are supported by theoretical calculations based on density functional theory.